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| AP4501GSD Pb Free Plating Product Advanced Power Electronics Corp. Simple Drive Requirement Low On-resistance Fast Switching Characteristic G2 D1 D1 D2 D2 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET N-CH BVDSS RDS(ON) ID P-CH BVDSS RDS(ON) ID D1 30V 27m 7A -30V 49m -5A D2 PDIP-8 S1 S2 G1 Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. G1 G2 S1 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25 ID@TA=70 IDM PD@TA=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating N-channel 30 20 7 5.8 40 2 0.016 -55 to 150 -55 to 150 P-channel -30 20 -5 -4.2 -30 Units V V A A A W W/ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 62.5 Unit /W Data and specifications subject to change without notice 200504042 AP4501GSD N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage 2 Test Conditions VGS=0V, ID=250uA Min. Typ. Max. Units 30 1 0.03 12 9 2 5 6 5 19 4 645 150 95 27 50 3 1 25 13 800 V V/ m m V S uA uA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=7A VGS=4.5V, ID=5A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25oC) Drain-Source Leakage Current (Tj=70 C) o VDS=VGS, ID=250uA VDS=10V, ID=7A VDS=30V, VGS=0V VDS=24V, VGS=0V VGS=20V ID=7A VDS=24V VGS=4.5V VDS=15V ID=1A RG=3.3,VGS=10V RD=15 VGS=0V VDS=25V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 100 nA Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 2 Test Conditions IS=1.7A, VGS=0V IS=7A, VGS=0V, dI/dt=100A/s Min. Typ. Max. Units 16 10 1.2 V ns nC Reverse Recovery Time Reverse Recovery Charge AP4501GSD P-CH Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS BVDSS/Tj o Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current ( T=25oC) j Drain-Source Leakage Current ( T=70 C) j o Test Conditions VGS=0V, ID=-250uA 2 Min. Typ. Max. Units -30 -1 -0.03 8 9 2 5 10 7 27 16 180 130 49 75 -3 -1 -25 15 V V/ m m V S uA uA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=-1mA RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss VGS=-10V, ID=-5A VGS=-4.5V, ID=-3A VDS=VGS, ID=-250uA VDS=-10V, ID=-5.3A VDS=-30V, VGS=0V VDS=-24V, VGS=0V VGS= 20V ID=-5A VDS=-24V VGS=-4.5V VDS=-15V ID=-1A RG=6,VGS=-10V RD=15 VGS=0V VDS=-25V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 100 nA Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 460 730 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 2 Test Conditions IS=-1.7A, VGS=0V IS=-5A, VGS=0V, dI/dt=100A/s Min. Typ. Max. Units 21 18 -1.2 V ns nC Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Mounted on 1 in2 copper pad of FR4 board ; 90/W when mounted on Min. copper pad. AP4501GSD N-Channel 40 36 T A =25 o C 30 ID , Drain Current (A) ID , Drain Current (A) 10V 8.0V 6.0V 5.0V T A =150 o C 10V 8.0V 6.0V 5.0V 24 20 12 V G =4. 0 V 10 V G =4.0V 0 0 1 2 3 4 0 0 2 3 5 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2 I D =7A T A =25 Normalized RDS(ON) 70 1.4 I D =7A V G = 10V RDS(ON) (m ) 40 0.8 10 2 5 8 11 0.2 -50 0 50 100 150 V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 3 10 2.5 1 2 IS(A) T J =150 o C T J =25 o C VGS(th) (V) 1.2 1.5 0.1 1 0.5 0.01 0 0.4 0.8 0 -50 0 50 100 150 V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP4501GSD N-Channel f=1.0MHz 12 1000 I D =7.0A VGS , Gate to Source Voltage (V) 9 C iss V DS =16V V DS =20V V DS =24V C (pF) 100 6 C oss C rss 3 0 0 4 8 12 16 10 1 7 13 19 25 31 Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 100us 10 Normalized Thermal Response (Rthja) Duty Factor = 0.5 0.2 1ms ID (A) 1 0.1 0.1 0.05 10ms 100ms 1s 10s DC 0.02 0.01 0.01 Single Pulse PDM t T 0.1 T A =25 o C Single Pulse 0.01 0.1 1 10 Duty Factor = t/T Peak Tj = PDM x Rthja + Ta Rthja =90o C/W 0.001 100 0.0001 0.001 0.01 0.1 1 10 100 1000 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VDS 90% VG QG 4.5V QGS QGD 10% VGS td(on) tr td(off)tf Charge Q Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform AP4501GSD P-Channel 40 36 T A =25 o C 30 -10V -8.0V -6.0V -ID , Drain Current (A) 24 T A =150 C o -10V -8.0V -6.0V -ID , Drain Current (A) -5.0V 20 -5.0V 12 10 V G = - 4. 0 V V G = - 4. 0 V 0 0 1 2 3 4 0 0 1 2 3 4 5 -V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 120 1.8 I D =-5.0A T A =25 Normalized R DS(ON) 1.6 I D =-5.0A V G = -10V 90 1.4 RDS(ON) (m ) 1.2 60 1 0.8 30 3 5 7 9 11 0.6 -50 0 50 100 150 -V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) o Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 3 10 2.5 1 2 -IS(A) T j =150 o C T j =25 o C -VGS(th) (V) 1.3 1.5 0.1 1 0.5 0.01 0.1 0.4 0.7 1 0 -50 0 50 100 150 -V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( C ) o Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP4501GSD P-Channel f=1.0MHz 12 1000 -VGS , Gate to Source Voltage (V) 10 I D =-5.0A V DS =-24V C iss 8 C (pF) C oss C rss 100 6 4 2 0 0 4 8 12 16 10 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) -V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Duty Factor = 0.5 100us 10 Normalized Thermal Response (Rthja) 0.2 1ms -ID (A) 10ms 1 0.1 0.1 0.05 0.02 100ms 1s 10s DC 0.01 0.01 PDM Single Pulse t T Duty Factor = t/T Peak Tj = PDM x Rthja + Ta Rthja=90oC/W 0.1 T A =25 C Single Pulse 0.01 0.1 1 10 o 0.001 100 0.0001 0.001 0.01 0.1 1 10 100 1000 -V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics VDS 90% VG QG -4.5V QGS QGD 10% VGS td(on) tr td(off)tf Charge Q Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform |
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